processing of emergins technology of ultra slim transition metals with oxidized layer

In the following thesis the technological processes of receiving and researching Memristor with active layer of hafnium oxides are discussed. The technological route for receiving the Memristor was developed. In a single process was made, two layered Memristors with magnetron sputtering method in oxygen and argon, including two different parsing pressure. For studying the electrical and structural characteristics of individual oxides, each oxide layer was obtained separately in the same technological mode. Various main tasks have been solved in the study, such as deposition of hafnium.as an additional source of oxygen ions, recording of x-ray spectrum of active layers of Memristors, Measurements of voltage-capacity (C-V) characteristics and characteristics of the current-voltage (I-V) of the Memristors. The results of the relevant measure were summarized and concluded that the received Mermistors fully satisfied the requirements set before him.