Technological processing for making thin dielectric films

Author: beka melua
Keywords: Thin dielectric; Hafnium; Magnetron sputtering; under gate dielectric.
Annotation:

The main element of micro and nano electronic devices and structures is the thin dielectric, for which special requirements are imposed. It should be: thin, not defective, with high dielectric permittivity and breakthrough voltage, etc. Such conditions are best met by transitional metal oxides, including hafnium oxide. Hafnium has an internal d-layer unfilled and shows variable valence in combination with other materials, so recently researchers have been showing particular interest in it. Modern technology for making oxides is high temperature, which causes defects in it and reduces the breakthrough voltage. The technological process of magnetron emission of hafnium oxide low-temperature formation is discussed, the electro-physical and dielectric parameters of its oxide film are investigated. The goal is set and the content discussion of separate technological processes is done. A technological route is designed to use oxide as an under gate dielectric in field-effect transistor. Optimal parameters for making the tape are developed. It has been shown that oxide films obtained by this technology can be used in the production of micro and nanotechnologies.