Study of integrated circuit elements' production technology

Author: Giorgi Gagnidze
Keywords: Double-gate field-effect transistor, Integrated circuit elements, Dielectric layer
Annotation:

The thesis reviews the technology of manufacturing semiconductor devices and integrated circuits (IC). This technology contains complex and numerous processes, and therefore it is necessary to study and analyze the individual processes of forming elements of an IC, such as a transistor, a capacitor and a resistor. Therefore, the work provides a classification of integrated circuits according to the technology of production and use. considered by the content, originality of photolithographic and diffusion technological processes, Issues of formation of the corresponding dielectric layers and metallization are given. The eletro-physical and optical parameters of dielectrics used in IC have been studied. The principle of creating an integrated circuit based on a double-gate field-effect transistor and the parameters calculated from the Volt-Ampere characteristics are given.